Infineon 600V CoolMOS SiC N-Channel MOSFET, 112 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R020CFD7XTMA1
- RS-stocknr.:
- 284-739
- Fabrikantnummer:
- IPDQ60R020CFD7XTMA1
- Fabrikant:
- Infineon
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 284-739
- Fabrikantnummer:
- IPDQ60R020CFD7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 112 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | 600V CoolMOS | |
| Package Type | PG-HDSOP-22 | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 112 A | ||
Maximum Drain Source Voltage 600 V | ||
Series 600V CoolMOS | ||
Package Type PG-HDSOP-22 | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET features a CoolMOS CFD7 series introduces a ground breaking power transistor specifically engineered for high voltage applications. With a remarkable voltage rating of 600V, it stands out due to its enhanced efficiency and reliability. The advanced super junction technology provides unparalleled performance, particularly in soft switching applications such as phase shift full bridge converters and LLC resonant topologies. The optimisation of gate charge and reverse recovery characteristics significantly reduces losses, thereby boosting the overall performance of power systems. This product is an ideal choice for industries demanding robust electrical performance, such as server ecosystems, telecommunications, and electric vehicle charging.
Optimised for soft switching topologies
Low gate charge enables faster switching
Superior reverse recovery improves performance
Designed for high reliability and uptime
Increases power density and saving space
Qualified per JEDEC standards for industry
Low gate charge enables faster switching
Superior reverse recovery improves performance
Designed for high reliability and uptime
Increases power density and saving space
Qualified per JEDEC standards for industry
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