Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- RS-stocknr.:
- 284-759
- Fabrikantnummer:
- IQE030N06NM5SCATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 6000 eenheden)*
€ 9.960,00
(excl. BTW)
€ 12.060,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 31 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 6000 + | € 1,66 | € 9.960,00 |
*prijsindicatie
- RS-stocknr.:
- 284-759
- Fabrikantnummer:
- IQE030N06NM5SCATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an optimos 5 power transistor is designed to excel in synchronous rectification applications, offering unparalleled performance and efficiency. With a robust design and state of the ART thermal management capabilities, this power MOSFET ensures reliable operation in demanding environments. Its superior thermal resistance makes it a prime choice for various industrial applications, ensuring that your systems operate with maximum reliability and minimal power loss. Fully compliant with RoHS regulations, this component prioritises eco friendliness while maintaining exceptional functionality.
High efficiency synchronous rectification
N channel configuration for effective performance
100% avalanche reliability tested
Halogen free materials for safer disposal
Wide industrial temperature range support
Minimal on state resistance reduces power loss
RoHS compliant for environmental sustainability
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