Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -22 A, 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1

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RS-stocknr.:
284-786
Fabrikantnummer:
ISC16DP15LMATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-22A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS Power Transistor

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an OptiMOS Power Transistor is designed to deliver exceptional performance for a range of industrial applications. With its Advanced P channel architecture and robust construction, it ensures reliability even under demanding conditions. Boasting a breakdown voltage of 150 V, this transistor is engineered to handle significant voltages effectively. Its low on resistance helps improve efficiency, making it a valuable component in power management systems. By aligning with RoHS compliance standards, this transistor further emphasises its commitment to environmental sustainability, making it an excellent choice for forward thinking projects.

Very low on resistance for efficiency

100% avalanche tested for reliability

Logic level gate drive compatibility

Excellent thermal performance reduces heat

RoHS compliant for eco friendliness

Qualified per JEDEC standards for reliability

Compact design for adaptable configurations

Halogen free lead plating for environmental safety

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