Infineon EasyPACK 3 SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B DF11MR12W1M1HFB67BPSA1

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RS-stocknr.:
284-808
Fabrikantnummer:
DF11MR12W1M1HFB67BPSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B

Series

EasyPACK

Pin Count

23

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

3

The Infineon MOSFET Module represents a cutting edge power semiconductor solution, specifically designed to enhance efficiency in high performance applications. Featuring advanced CoolSiC trench MOSFET technology, it assures exceptional power handling capabilities and reliability. With a rugged design tailored for demanding industrial environments, this module facilitates seamless integration and robust performance in solar applications and beyond. The integration of an NTC temperature sensor further supports operational safety, ensuring optimal performance under variable conditions. Ideal for engineers and developers, this product simplifies complex systems while maintaining operational excellence.

1200 V rating ensures high voltage reliability
High current density enables compact designs
PressFIT technology for secure connections
Integrated NTC sensor for temperature monitoring
Robust clamps ensure secure installation
Qualified for industrial applications per IEC standards

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