Infineon EasyDUAL N-Channel MOSFET, 50 A, 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- RS-stocknr.:
- 284-821
- Fabrikantnummer:
- FF17MR12W1M1HB11BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 24 eenheden)*
€ 1.019,52
(excl. BTW)
€ 1.233,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 24 stuk(s) vanaf 14 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 24 + | € 42,48 | € 1.019,52 |
*prijsindicatie
- RS-stocknr.:
- 284-821
- Fabrikantnummer:
- FF17MR12W1M1HB11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | EasyDUAL | |
| Package Type | AG-EASY1B | |
| Mount Type | Screw | |
| Pin Count | 23 | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Power Dissipation Pd | 20mW | |
| Typical Gate Charge Qg @ Vgs | 0.149μC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series EasyDUAL | ||
Package Type AG-EASY1B | ||
Mount Type Screw | ||
Pin Count 23 | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Power Dissipation Pd 20mW | ||
Typical Gate Charge Qg @ Vgs 0.149μC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
The Infineon MOSFET Module represents a significant advancement in power semiconductor technology, designed to meet the rigorous demands of high frequency switching applications. This innovative module incorporates CoolSiC trench MOSFETs, delivering unparalleled efficiency and reliability. With a robust design tailored for industrial applications, it ensures low switching losses and excellent thermal performance. The integrated PressFIT contact technology simplifies installation while maintaining a secure connection. This module is an Ideal choice for applications such as DC/DC converters and UPS systems, revolutionising energy management with its compact, Durable construction.
Low inductive design optimises dynamic performance
Integrated temperature sensor enhances safety
Rugged mounting ensures reliability in demanding environments
Qualified for industrial applications per IEC standards
Ideal for DC charging in electric vehicles
Streamlined installation with PressFIT technology
Gerelateerde Links
- Infineon EasyDUAL Type N-Channel MOSFET 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HPB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF17MR12W1M1HB70BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF33MR12W1M1HPB11BPSA1
- Infineon EasyDUAL Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B FF33MR12W1M1HB11BPSA1
- Infineon EasyPACK SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF17MR12W1M1HFB68BPSA1
- Infineon FS55MR12W1M1H_B11 Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY1B
- Infineon EasyPACK Dual SiC N-Channel MOSFET 1200 V, 23-Pin AG-EASY1B DF8MR12W1M1HFB67BPSA1