Infineon EasyDUAL Type N-Channel MOSFET, 50 A, 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- RS-stocknr.:
- 284-821
- Fabrikantnummer:
- FF17MR12W1M1HB11BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 24 eenheden)*
€ 2.577,432
(excl. BTW)
€ 3.118,704
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 24 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 24 + | € 107,393 | € 2.577,43 |
*prijsindicatie
- RS-stocknr.:
- 284-821
- Fabrikantnummer:
- FF17MR12W1M1HB11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY1B | |
| Series | EasyDUAL | |
| Mount Type | Screw | |
| Pin Count | 23 | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 0.149μC | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.35V | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY1B | ||
Series EasyDUAL | ||
Mount Type Screw | ||
Pin Count 23 | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 0.149μC | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.35V | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
The Infineon MOSFET Module represents a significant advancement in power semiconductor technology, designed to meet the rigorous demands of high frequency switching applications. This innovative module incorporates CoolSiC trench MOSFETs, delivering unparalleled efficiency and reliability. With a robust design tailored for industrial applications, it ensures low switching losses and excellent thermal performance. The integrated PressFIT contact technology simplifies installation while maintaining a secure connection. This module is an Ideal choice for applications such as DC/DC converters and UPS systems, revolutionising energy management with its compact, Durable construction.
Low inductive design optimises dynamic performance
Integrated temperature sensor enhances safety
Rugged mounting ensures reliability in demanding environments
Qualified for industrial applications per IEC standards
Ideal for DC charging in electric vehicles
Streamlined installation with PressFIT technology
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