Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 60 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

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RS-stocknr.:
284-861
Fabrikantnummer:
IMYH200R012M1HXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

2000V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO-247-4-PLUS-NT14

Mount Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

Land van herkomst:
MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET stands out as a high performance component designed for demanding applications. Leveraging Advanced silicon carbide technology, it delivers exceptional efficiency and thermal performance, making it Ideal for use in modern power systems. With a robust structure and innovative features, this device ensures reliability across various applications, including string inverters, solar power optimisation, and electric vehicle charging. The carefully engineered MOSFET is optimally suited for high voltage environments, providing superior operational advantages for both industrial and commercial usage. Its Advanced interconnection technology further contributes to its prestigious reputation in the market, enabling prolonged device lifespan and enhanced power management capabilities.

Delivers low switching losses for efficiency

Robust body diode for hard commutation

Benchmark gate threshold voltage for control

Very low on state resistance for conductivity

High thermal resistance minimizes overheating

Suitable for high voltage up to 2000 V

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