Infineon 650V CoolMOS SiC N-Channel MOSFET, 36 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R080CFD7XTMA1

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RS-stocknr.:
284-880
Fabrikantnummer:
IPDQ65R080CFD7XTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HDSOP-22

Series

650V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features a latest generation of CoolMOS technology, this product represents a significant advancement in high performance MOSFETs. Built to extend efficiency at 650V, it surpasses its predecessor, CoolMOS CFD2, by showcasing improved thermal behaviour and enhanced switching performance. Its exceptional capabilities allow it to excel in resonant switching topologies, including LLC and phase shift full bridge. Designed with a fast body diode, the device is optimised for applications demanding high power density and reliability. This product is fully qualified according to JEDEC standards, ensuring superior quality for industrial applications. Perfect for tech developers and engineers seeking cutting edge solutions in EV charging, telecom, and server applications, this MOSFET sets a new benchmark for power efficiency.

Ultra fast body diode enhances speed
Reduces switching losses for efficiency
Best in class on state resistance
Ensures ruggedness during commutation
Safety margin for high bus voltage
Supports light load efficiency
Improves full load efficiency
Optimised for phase shift designs
Complies with JEDEC standards

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