Infineon 650V CoolMOS SiC N-Channel MOSFET, 64 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R040CFD7XTMA1

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RS-stocknr.:
284-874
Fabrikantnummer:
IPDQ65R040CFD7XTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HDSOP-22

Series

650V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features a 650V CoolMOS CFD7 Power Device sets a new benchmark in efficiency and reliability. Designed for cutting edge applications, it serves as a successor to its renowned predecessor, offering enhanced thermal behaviour and superior switching performance. Boasting unparalleled efficiency in resonant switching topologies such as LLC and phase shift full bridge configurations, this device is an ideal choice for high density power solutions. Its fast body diode technology not only delivers exceptional ruggedness but also supports intricate circuit designs in industries like server, telecom, EV charging, and solar applications.

Ultra fast body diode enhances performance
Reduces switching losses for better efficiency
Exceptional thermal resistance in compact designs
Reliable hard commutation for demanding applications
Ideal for high power density solutions
Optimises light load efficiency in industrial setups
Tailored for modern PCB compatibility and integration

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