Infineon 600V CoolMOS Type N-Channel MOSFET, 50 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60R010S7XTMA1

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RS-stocknr.:
284-892
Fabrikantnummer:
IPQC60R010S7XTMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-HDSOP-22

Series

600V CoolMOS

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

694W

Typical Gate Charge Qg @ Vgs

318nC

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, JEDEC for Industrial Applications

Automotive Standard

No

The Infineon MOSFET with cutting edge 600V CoolMOS SJ S7 Power Device represents a remarkable Leap in MOSFET technology, specifically tailored for low frequency switching applications. Engineered with the utmost precision, this device offers unparalleled energy efficiency, making it an Ideal choice for solid state relays, circuit breakers, and various power management systems. The Advanced design, showcasing a Compact footprint and superior heat dissipation capabilities, ensures optimal performance under demanding conditions. Recognised for its distinct advantages over traditional electromechanical components, this device integrates seamless switching with exceptional reliability. It is fully qualified according to JEDEC standards for industrial applications, providing reassurance of its robustness and dependability in a wide range of environments.

Optimised for price and performance

High Pulse current capability for robustness

Kelvin source pin enhances switching performance

Supports applications facing shock and vibration

Internal body diode minimises conduction losses

Accommodates TOP side cooling for better thermal performance

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