Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
- RS-stocknr.:
- 284-928
- Fabrikantnummer:
- IQD009N06NM5CGATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 12.700,00
(excl. BTW)
€ 15.350,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 31 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 2,54 | € 12.700,00 |
*prijsindicatie
- RS-stocknr.:
- 284-928
- Fabrikantnummer:
- IQD009N06NM5CGATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for high efficiency performance in various applications, providing stable operation at a maximum voltage of 60V. This N channel MOSFET features a low on resistance, which significantly reduces power losses, ensuring that your designs maintain optimal thermal management even under challenging conditions. With Advanced avalanche characteristics and extensive testing for reliability, this device caters to industrial applications demanding superior thermal resistance and robust performance. The Compact PG TTFN 9 packaging enhances ease of integration into existing designs, making it a go to choice for engineers looking to enhance their systems.
Very low on resistance improves efficiency
Enhanced thermal resistance for performance
Optimised for continuous and pulsed currents
Comprehensive avalanche ratings for durability
RoHS and halogen free compliant
Fully qualified per JEDEC standards
Significant savings on power dissipation
Flexible temperature range for diverse environments
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