Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1

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RS-stocknr.:
284-950
Fabrikantnummer:
IQE022N06LM5CGATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

151A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

PG-TTFN-9

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

2.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

100W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is a high performance power transistor is engineered for demanding power management applications. It showcases Advanced OptiMOS 5 technology, optimised for synchronous rectification in Switched Mode power supplies. The innovative design ensures very low on resistance, offering superior thermal characteristics that enhance reliability and efficiency. This product, rated at 60V, is especially suitable for industrial applications due to its robust avalanche testing and compliance with RoHS standards. With its logic level N channel design, it simplifies integration into your circuit while maintaining outstanding operational performance.

Optimised for high efficiency power conversion

Logic level N channel for easy interfacing

100% avalanche tested for reliability

RoHS compliant for environmental safety

Halogen free and supporting sustainability standards

JEDEC validated for industrial applications

Superior thermal management extends lifespan

High continuous drain current for demanding loads

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