Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- RS-stocknr.:
- 284-943
- Fabrikantnummer:
- IQDH35N03LM5CGATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 6,01
(excl. BTW)
€ 7,272
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,005 | € 6,01 |
| 20 - 198 | € 2,705 | € 5,41 |
| 200 - 998 | € 2,495 | € 4,99 |
| 1000 - 1998 | € 2,31 | € 4,62 |
| 2000 + | € 2,075 | € 4,15 |
*prijsindicatie
- RS-stocknr.:
- 284-943
- Fabrikantnummer:
- IQDH35N03LM5CGATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 789A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 789A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- AT
The Infineon MOSFET features an OptiMOS 5 Power Transistor exemplifies cutting edge technology in MOSFET performance, designed primarily for high efficiency switching applications. This transistor operates at a voltage of 25V and is tailored for unparalleled thermal management and low on resistance, ensuring superior efficiency in demanding environments. Manufactured with Advanced materials and adhering to the highest industry standards, it stands out for its capability to handle high current loads while maintaining low energy loss. The unique design supports robust thermal resistance, facilitating effective heat dissipation, even in Compact layouts.
N channel technology for fast switching
Low on resistance reduces energy losses
Superior thermal resistance for reliability
Fully qualified for industrial durability
Avalanche tested for consistent performance
Pb free plating supports sustainability
Halogen free construction meets safety standards
Compact design for easy integration
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