STMicroelectronics STL Type N-Channel MOSFET, 167 A, 40 V, 8-Pin PowerFLAT STL145N4LF8AG
- RS-stocknr.:
- 330-243
- Fabrikantnummer:
- STL145N4LF8AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 1,28
(excl. BTW)
€ 1,55
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending vanaf 24 juli 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 1,28 |
| 10 - 99 | € 1,15 |
| 100 - 499 | € 1,06 |
| 500 - 999 | € 1,00 |
| 1000 + | € 0,89 |
*prijsindicatie
- RS-stocknr.:
- 330-243
- Fabrikantnummer:
- STL145N4LF8AG
- Fabrikant:
- STMicroelectronics
Specificaties
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 167A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 167A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in Strip FET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
AEC-Q101 qualified
MSL1 grade
175°C maximum operating junction temperature
100% avalanche tested
Low gate charge Qg
Wet table flank package
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