Microchip PD70224 Type N-Channel MOSFET, 2 A, 74 V, 40-Pin QFN PD70224ILQ-TR
- RS-stocknr.:
- 333-012
- Fabrikantnummer:
- PD70224ILQ-TR
- Fabrikant:
- Microchip
Subtotaal (1 rol van 2000 eenheden)*
€ 9.670,00
(excl. BTW)
€ 11.700,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 4,835 | € 9.670,00 |
*prijsindicatie
- RS-stocknr.:
- 333-012
- Fabrikantnummer:
- PD70224ILQ-TR
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 74V | |
| Series | PD70224 | |
| Package Type | QFN | |
| Mount Type | Surface | |
| Pin Count | 40 | |
| Maximum Drain Source Resistance Rds | 0.26Ω | |
| Forward Voltage Vf | 192mV | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | IEEE 802.3af and IEEE 802.3at, IEEE 802.3bt and PoH, RoHS | |
| Height | 1mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 74V | ||
Series PD70224 | ||
Package Type QFN | ||
Mount Type Surface | ||
Pin Count 40 | ||
Maximum Drain Source Resistance Rds 0.26Ω | ||
Forward Voltage Vf 192mV | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals IEEE 802.3af and IEEE 802.3at, IEEE 802.3bt and PoH, RoHS | ||
Height 1mm | ||
Length 6mm | ||
Automotive Standard No | ||
The Microchip Dual pack of MOSFET based full bridge rectifiers. It contains low Rds 0.16Ω N channel MOSFETs for much higher overall efficiency and higher output power, particularly when used in Powered Devices (PDs) for PoE applications. The entire drive circuitry for driving the MOSFETs is on chip, including a charge pump for driving the high side N channel MOSFETs.
Active circuit with low forward drop to replace dissipative passive diode bridges
Self contained drive circuitry for MOSFETs
Designed to support IEEE-802.3af / at / bt and PoH
Integrated 0.16 Ohm N channel MOSFETs for 0.3 Ohm total path resistance
Power present indicator signals for identifying 4 pair bridge power
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