onsemi PowerTrench Power Clip Type N-Channel MOSFET, 126 A, 25 V Enhancement, 8-Pin PQFN-8 NTTFD1D8N02P1E
- RS-stocknr.:
- 333-403
- Fabrikantnummer:
- NTTFD1D8N02P1E
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 5 eenheden)*
€ 10,14
(excl. BTW)
€ 12,27
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 01 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 2,028 | € 10,14 |
| 50 - 95 | € 1,922 | € 9,61 |
| 100 - 495 | € 1,78 | € 8,90 |
| 500 - 995 | € 1,642 | € 8,21 |
| 1000 + | € 1,58 | € 7,90 |
*prijsindicatie
- RS-stocknr.:
- 333-403
- Fabrikantnummer:
- NTTFD1D8N02P1E
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PQFN-8 | |
| Series | PowerTrench Power Clip | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37.5nC | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-Free | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PQFN-8 | ||
Series PowerTrench Power Clip | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37.5nC | ||
Maximum Power Dissipation Pd 36W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-Free | ||
Length 3.3mm | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The ON Semiconductor Power MOSFET optimized for low-voltage applications, offering high efficiency and minimal conduction losses. With its DSC-6 package, it provides excellent thermal performance and space-saving benefits for modern electronic designs. This device ensures reliable operation with low R DS(on) and robust current handling.
Small Footprint for Compact Design
Low QG and Capacitance to Minimize Driver Losses
Pb Free
RoHS Compliant
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