Infineon CoolSiC Type N-Channel MOSFET, 57 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R040M2HXTMA1
- RS-stocknr.:
- 349-050
- Fabrikantnummer:
- IMLT65R040M2HXTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 10,45
(excl. BTW)
€ 12,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending vanaf 16 november 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,45 |
| 10 - 99 | € 9,40 |
| 100 - 499 | € 8,67 |
| 500 - 999 | € 8,04 |
| 1000 + | € 7,22 |
*prijsindicatie
- RS-stocknr.:
- 349-050
- Fabrikantnummer:
- IMLT65R040M2HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-16 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 268W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-16 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 268W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, providing unparalleled performance, superior reliability, and excellent ease of use. Designed to meet the demands of modern power systems, this MOSFET enables cost effective, highly efficient, and simplified designs. It is the ideal solution for addressing the ever-growing needs of power systems and markets, offering both high performance and energy efficiency for a wide range of applications.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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