Infineon IMT Type N-Channel MOSFET, 77 A, 650 V Enhancement, 4-Pin PG-LHSOF-4 IMTA65R020M2HXTMA1

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€ 22,59

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  • Verzending vanaf 17 november 2027
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RS-stocknr.:
349-056
Fabrikantnummer:
IMTA65R020M2HXTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

77A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-LHSOF-4

Series

IMT

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

57nC

Maximum Power Dissipation Pd

416W

Maximum Gate Source Voltage Vgs

4.5 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, making it ideal for meeting the ever-growing demands of modern power systems and markets. Its advanced technology provides a powerful solution for achieving high system efficiency in a wide range of applications.

Ultra low switching losses

Robust against parasitic turn‑on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

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