Infineon IMT Type N-Channel MOSFET, 43 A, 650 V Enhancement, 4-Pin PG-LHSOF-4 IMTA65R050M2HXTMA1
- RS-stocknr.:
- 349-058
- Fabrikantnummer:
- IMTA65R050M2HXTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,55
(excl. BTW)
€ 10,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 november 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 8,55 |
| 10 - 99 | € 7,70 |
| 100 - 499 | € 7,10 |
| 500 - 999 | € 6,59 |
| 1000 + | € 5,89 |
*prijsindicatie
- RS-stocknr.:
- 349-058
- Fabrikantnummer:
- IMTA65R050M2HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-LHSOF-4 | |
| Series | IMT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 62mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 197W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-LHSOF-4 | ||
Series IMT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 62mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 197W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, making it ideal for meeting the ever-growing demands of modern power systems and markets. Its advanced technology provides a powerful solution for achieving high system efficiency in a wide range of applications.
Ultra low switching losses
Robust against parasitic turn‑on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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