Infineon ISC Type N-Channel N-Channel Mosfet, 85 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- RS-stocknr.:
- 349-145
- Fabrikantnummer:
- ISC078N12NM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,94
(excl. BTW)
€ 14,445
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,388 | € 11,94 |
| 50 - 95 | € 2,27 | € 11,35 |
| 100 - 495 | € 2,102 | € 10,51 |
| 500 - 995 | € 1,932 | € 9,66 |
| 1000 + | € 1,862 | € 9,31 |
*prijsindicatie
- RS-stocknr.:
- 349-145
- Fabrikantnummer:
- ISC078N12NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | N-Channel Mosfet | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-TDSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type N-Channel Mosfet | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-TDSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon OptiMOS 6 Power Transistor is an N channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving energy efficiency. The transistor offers an excellent gate charge x RDS(on) product (FOM), enhancing switching performance. With very low reverse recovery charge (Qrr), it minimizes switching losses, making it ideal for fast-switching applications. It also has a high avalanche energy rating, ensuring robustness under transient conditions. Additionally, the MOSFET operates at a 175°C temperature, providing high thermal endurance for demanding applications.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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