Infineon ISC Type N-Channel Power Transistor, 541 A, 40 V Enhancement, 8-Pin PG-TDSON-8 ISCH42N04LM7ATMA1
- RS-stocknr.:
- 349-391
- Fabrikantnummer:
- ISCH42N04LM7ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 16,86
(excl. BTW)
€ 20,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 november 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,372 | € 16,86 |
| 50 - 95 | € 3,204 | € 16,02 |
| 100 + | € 2,966 | € 14,83 |
*prijsindicatie
- RS-stocknr.:
- 349-391
- Fabrikantnummer:
- ISCH42N04LM7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 541A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 234W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 541A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISC | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 234W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 7 Power Transistor, 40 V, N-channel is a high performance MOSFET designed to offer exceptional efficiency and reliability in power switching applications. Featuring very low on-resistance (RDS(on)), it helps minimize conduction losses, enhancing overall system efficiency. Its superior thermal resistance ensures effective heat dissipation, making it well-suited for high power applications. Additionally, it is 100% avalanche tested, providing robust protection against transient events and ensuring stable performance even under harsh conditions.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
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