Infineon ISC Type N-Channel Power Transistor, 74 A, 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1
- RS-stocknr.:
- 349-149
- Fabrikantnummer:
- ISC151N20NM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 11,13
(excl. BTW)
€ 13,468
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 5,565 | € 11,13 |
| 20 - 198 | € 5,01 | € 10,02 |
| 200 - 998 | € 4,625 | € 9,25 |
| 1000 - 1998 | € 4,29 | € 8,58 |
| 2000 + | € 3,84 | € 7,68 |
*prijsindicatie
- RS-stocknr.:
- 349-149
- Fabrikantnummer:
- ISC151N20NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | ISC | |
| Package Type | PG-TDSON-8 FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series ISC | ||
Package Type PG-TDSON-8 FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps to minimize conduction losses and improve system efficiency. With an excellent gate charge x RDS(on) product (FOM), this transistor ensures optimized switching performance. It also offers very low reverse recovery charge (Qrr), reducing switching losses and enhancing overall efficiency in fast-switching circuits. Designed to operate at a 175°C temperature, it provides high reliability in demanding environments and offers superior thermal performance for robust operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
100% avalanche tested
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