Infineon Type N-Channel MOSFET, 195 A, 2000 V Enhancement FF5MR20KM1HHPSA1
- RS-stocknr.:
- 349-317
- Fabrikantnummer:
- FF5MR20KM1HHPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 791,22
(excl. BTW)
€ 957,38
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 november 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 791,22 |
*prijsindicatie
- RS-stocknr.:
- 349-317
- Fabrikantnummer:
- FF5MR20KM1HHPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 15.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 6.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 15.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 6.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- Land van herkomst:
- HU
The Infineon 62 mm CoolSiC MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre applied Thermal Interface Material.
High current density
Low switching losses
Superior gate oxide reliability
Robust integrated body diode
High cosmic ray robustness
High speed switching module
Symmetrical module design
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