Infineon CoolSiC Type N-Channel MOSFET, 60 A, 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R027M1HXKSA1
- RS-stocknr.:
- 349-341
- Fabrikantnummer:
- IMZA75R027M1HXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 17,54
(excl. BTW)
€ 21,22
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 17,54 |
| 10 - 99 | € 15,78 |
| 100 + | € 14,56 |
*prijsindicatie
- RS-stocknr.:
- 349-341
- Fabrikantnummer:
- IMZA75R027M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | CoolSiC | |
| Package Type | PG-TO247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 234W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series CoolSiC | ||
Package Type PG-TO247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 234W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon 750 V CoolSiC Power Device G1 is built on Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the unique characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. It is specifically designed for high temperature and harsh operating conditions, enabling the simplified and cost effective deployment of systems with the highest efficiency. This MOSFET is perfect for applications requiring robust performance and energy efficient solutions.
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
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