Semikron Danfoss SEMITOP SiC Power Module, 223 A, 1200 V SEMITOP E2 SK200MB120CR03TE2
- RS-stocknr.:
- 351-859
- Fabrikantnummer:
- SK200MB120CR03TE2
- Fabrikant:
- Semikron Danfoss
Subtotaal (1 eenheid)*
€ 188,30
(excl. BTW)
€ 227,84
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 37 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 188,30 |
*prijsindicatie
- RS-stocknr.:
- 351-859
- Fabrikantnummer:
- SK200MB120CR03TE2
- Fabrikant:
- Semikron Danfoss
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Semikron Danfoss | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 223A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | SEMITOP E2 | |
| Series | SEMITOP | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 4.6V | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Typical Gate Charge Qg @ Vgs | 590nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61340/UL | |
| Width | 57 mm | |
| Length | 63mm | |
| Height | 12mm | |
| Alles selecteren | ||
|---|---|---|
Merk Semikron Danfoss | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 223A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type SEMITOP E2 | ||
Series SEMITOP | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 4.6V | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Typical Gate Charge Qg @ Vgs 590nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61340/UL | ||
Width 57 mm | ||
Length 63mm | ||
Height 12mm | ||
- Land van herkomst:
- IT
The Semikron SiC MOSFET WS half-bridge features a 223 A current rating and is simple to drive with a +15V gate voltage. It offers optimized switching stability with module-integrated gate resistors and includes an integrated NTC temperature sensor for efficient thermal monitoring. UL recognized under file no. E63532.
Optimized design for superior thermal performance
Extremely low inductance design
Press Fit contact technology
1200V Planar Gen3 SiC MOSFET
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