Infineon HEXFET Type N-Channel MOSFET, 60 A, 250 V Enhancement, 3-Pin TO-220 IRFB4332PBF

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 2,47

(excl. BTW)

€ 2,99

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • 1.801 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
1 - 9€ 2,47
10 - 24€ 2,36
25 - 49€ 2,24
50 - 99€ 2,16
100 +€ 2,01

*prijsindicatie

RS-stocknr.:
495-562
Fabrikantnummer:
IRFB4332PBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

390W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

99nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.82 mm

Height

9.02mm

Length

10.66mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF


This MOSFET is tailored for high-performance applications in automation and electronics. Leveraging Advanced HEXFET technology, it ensures optimal efficiency and reliability in critical environments. The device features robust specifications combined with a user-friendly design, making it suitable for a range of industrial applications. Its effective operation in rigorous conditions meets the requirements of modern electronic systems.

Features & Benefits


• N-channel configuration supports efficient current flow

• Continuous drain current rating of 60A facilitates strong performance

• High voltage capacity up to 250V enhances versatility

• Low on-resistance increases efficiency and minimises heat generation

• Enhancement mode operation improves stability for digital applications

• High power dissipation capability contributes to reliability under load

Applications


• Applied in energy recovery systems to boost efficiency

• Suitable for pass switch where space is limited

• Utilised in plasma display panels to enhance performance

• Ideal for automation controls demanding sustained high current

What is the temperature range for optimal operation?


The device operates effectively between -40°C and +175°C, allowing it to function in diverse environmental conditions.

How does the gate threshold voltage affect performance?


With a threshold voltage between 3V and 5V, it permits precise control in switching applications.

Can it handle high pulsed currents?


Yes, the design accommodates pulsed drain currents, allowing for 230A under specific conditions, which is advantageous for transient applications.

What are the thermal management requirements?


To maintain optimal performance, adequate cooling measures should be implemented, considering a maximum power dissipation of 390W.

Is it compatible with various mounting configurations?


The TO-220AB package allows for straightforward through-hole mounting, enhancing compatibility across multiple circuit designs.

Gerelateerde Links