Microchip TN0106 Type N-Channel Single MOSFETs, 3.4 A, 60 V Enhancement, 3-Pin TO-92 TN0106N3-G
- RS-stocknr.:
- 598-395
- Fabrikantnummer:
- TN0106N3-G
- Fabrikant:
- Microchip
Subtotaal (1 zak van 1000 eenheden)*
€ 731,00
(excl. BTW)
€ 885,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 09 februari 2026
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Aantal stuks | Per stuk | Per Zak* |
|---|---|---|
| 1000 + | € 0,731 | € 731,00 |
*prijsindicatie
- RS-stocknr.:
- 598-395
- Fabrikantnummer:
- TN0106N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TN0106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | RoHS | |
| Length | 0.205in | |
| Height | 0.82in | |
| Width | 0.165 in | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TN0106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals RoHS | ||
Length 0.205in | ||
Height 0.82in | ||
Width 0.165 in | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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