Microchip VN2106 Type N-Channel Single MOSFETs, 600 mA, 60 V Enhancement, 3-Pin TO-92 VN2106N3-G
- RS-stocknr.:
- 598-580
- Fabrikantnummer:
- VN2106N3-G
- Fabrikant:
- Microchip
Subtotaal (1 zak van 2000 eenheden)*
€ 714,00
(excl. BTW)
€ 864,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Zak* |
|---|---|---|
| 2000 + | € 0,357 | € 714,00 |
*prijsindicatie
- RS-stocknr.:
- 598-580
- Fabrikantnummer:
- VN2106N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | VN2106 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.82in | |
| Length | 0.205in | |
| Width | 0.165 in | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series VN2106 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.82in | ||
Length 0.205in | ||
Width 0.165 in | ||
Automotive Standard No | ||
The Microchip N channel enhancement-mode vertical transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure along with a well-proven silicon gate manufacturing process. This combination ensures the device is free from secondary breakdown and operates with a low power drive requirement, making it efficient and reliable for various applications.
Ease of paralleling
Low power drive requirement
High input impedance and high gain
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