Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

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€ 999,00

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€ 1.209,00

(incl. BTW)

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  • Verzending vanaf 23 februari 2026
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RS-stocknr.:
598-665
Fabrikantnummer:
VN2460N3-G
Fabrikant:
Microchip
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Merk

Microchip

Channel Type

N-Channel Vertical DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

90V

Package Type

TO-92-3 (TO-226AA)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Height

5.33mm

Length

5.08mm

Width

4.19 mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

Land van herkomst:
PH
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source drain diode

High input impedance and high gain

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