Microchip LND01 N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND01K1-G
- RS-stocknr.:
- 598-897
- Fabrikantnummer:
- LND01K1-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 3000 eenheden)*
€ 1.281,00
(excl. BTW)
€ 1.551,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,427 | € 1.281,00 |
*prijsindicatie
- RS-stocknr.:
- 598-897
- Fabrikantnummer:
- LND01K1-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Series | LND01 | |
| Package Type | SOT-23-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -25°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 125°C | |
| Length | 3.05mm | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Width | 1.75mm | |
| Height | 1.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Series LND01 | ||
Package Type SOT-23-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -25°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 125°C | ||
Length 3.05mm | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Width 1.75mm | ||
Height 1.3mm | ||
Automotive Standard No | ||
The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Low on resistance
Low input capacitance
Fast switching speeds
High input impedance and high gain
Low power drive requirement
Ease of paralleling
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