ROHM R2P N-Channel Single MOSFETs, 2 A, 60 V Enhancement, 3-Pin MPT3 R2P020N06HZGT100
- RS-stocknr.:
- 646-553P
- Fabrikantnummer:
- R2P020N06HZGT100
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 100 eenheden (geleverd op een doorlopende strip)*
€ 30,40
(excl. BTW)
€ 36,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 130 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 100 - 240 | € 0,304 |
| 250 - 990 | € 0,274 |
| 1000 - 4990 | € 0,222 |
| 5000 + | € 0,216 |
*prijsindicatie
- RS-stocknr.:
- 646-553P
- Fabrikantnummer:
- R2P020N06HZGT100
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | MPT3 | |
| Series | R2P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Length | 4.3mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type MPT3 | ||
Series R2P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Length 4.3mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel 60 volt 2 ampere middle power metal oxide semiconductor field effect transistor features low on resistance and supports low voltage drive with 2 point 5 volt operation.
AEC-Q101 Qualified
