Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6 SQ3419CEV-T1_GE3

RS-stocknr.:: 653-161
Fabrikantnummer:: SQ3419CEV-T1_GE3
Fabrikant:: Vishay

Vishay SQ3419CEV Type P-Channel Single MOSFETs, -6.9 A, -40 V Enhancement, 6-Pin TSOP-6 SQ3419CEV-T1_GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 807,00

(excl. BTW)

€ 975,00

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,269	€ 807,00

*prijsindicatie

RS-stocknr.:: 653-161
Fabrikantnummer:: SQ3419CEV-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	-6.9A
	Maximum Drain Source Voltage Vds	-40V
	Package Type	TSOP-6
	Series	SQ3419CEV
	Mount Type	PCB
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.092Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	5W
	Typical Gate Charge Qg @ Vgs	11.3nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Height	1.1mm
	Standards/Approvals	RoHS
	Length	3.10mm
	Width	2.98mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id -6.9A
	Maximum Drain Source Voltage Vds -40V
	Package Type TSOP-6
	Series SQ3419CEV
	Mount Type PCB
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.092Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 5W
	Typical Gate Charge Qg @ Vgs 11.3nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Height 1.1mm
	Standards/Approvals RoHS
	Length 3.10mm
	Width 2.98mm
	Automotive Standard AEC-Q101

Datasheet - SQ3419CEV-T1_GE3

Vishay SQ3419CEV Series Single MOSFETs, -40V Drain-Source Voltage, -6.9A Drain Current - SQ3419CEV-T1_GE3

This single MOSFET device is a P-channel enhancement transistor intended for PCB mounting in automotive and industrial control systems. Designed to operate within demanding temperature ranges, it supports switching and load control duties where a P-channel configuration is preferred. The component is supplied in a Compact TSOP-6 package suitable for space-constrained assemblies and conforms to RoHS standards.

Features and Benefits:

• 40V maximum drain-source voltage provides headroom for automotive systems • -6.9A continuous drain current supports moderate power loads • 0.092 Ω low Rds(on) reduces conduction losses and heat generation • 11.3 nC typical gate charge enables predictable switching performance • 5W power dissipation allows sustained operation under load • Rated for -55 °C to 175 °C use in high-temperature environments

Applications

• Suitable for battery management and load switching in vehicles • Ideal for power distribution in automotive electronic modules • Used for polarity protection and reverse-current control in DC circuits • Can be used for high-temperature industrial control electronics

What package type should I allow for board layout?

The component comes in a TSOP-6 package with six pins, requiring pad and thermal planning compatible with surface-mount PCB assembly.

How does the device handle gate drive requirements?

It tolerates gate-source voltages up to 20 V, enabling compatibility with common automotive and industrial gate-drive voltages.

What environmental limits apply during operation?

The device is specified for continuous use down to -55 °C and up to 175 °C, allowing operation across broad thermal conditions.

Are there any standard approvals relevant to automotive design?

It meets AEC‑Q101 requirements and is supplied in a RoHS‑compliant format suitable for regulatory‑aware manufacturing.