Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3

RS-stocknr.:: 653-188
Fabrikantnummer:: SQS201CENW-T1_GE3
Fabrikant:: Vishay

Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK SQS201CENW-T1_GE3

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Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK

RS-stocknr.: 653-189

1 tape 1

€ 1,06

(excl. BTW)

€ 1,28

(incl. BTW)

RS-stocknr.:: 653-188
Fabrikantnummer:: SQS201CENW-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-16A
	Maximum Drain Source Voltage Vds	-100V
	Series	SQS201CENW
	Package Type	PowerPAK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0800Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	26nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.1V
	Maximum Operating Temperature	175°C
	Width	3.3mm
	Height	0.41mm
	Length	3.3mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Continuous Drain Current Id -16A
	Maximum Drain Source Voltage Vds -100V
	Series SQS201CENW
	Package Type PowerPAK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0800Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 26nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.1V
	Maximum Operating Temperature 175°C
	Width 3.3mm
	Height 0.41mm
	Length 3.3mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SQS201CENW-T1_GE3

Land van herkomst:: CN

Vishay SQS201CENW Series Single MOSFETs, 100V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3

This single MOSFETs device is a P‑channel enhancement MOSFET designed for power switching in demanding electronic systems. It operates over a broad ambient range and is suitable for PCB mounting in environments requiring high drain voltage capability and significant continuous current handling.

Features and Benefits:

• 100V drain withstand for high-voltage switching capability
• 16A continuous current for heavy-load conduction
• 62.5W power dissipation enables sustained power handling
• 0.0800Ω low Rds(on) reduces conduction losses
• 26nC typical gate charge for efficient switching control
• ±20V gate tolerance supports robust drive signalling

Applications

• Suitable for high-voltage load switching in automotive electronics
• Ideal for reverse-polarity protection circuits in power rails
• Used with DC-DC converters requiring low conduction loss
• Can be used for motor driver high-side switching stages
• Appropriate for telematics and control modules in harsh climates

What thermal extremes can the device tolerate during operation?

It is rated to operate from -55°C up to 175°C, allowing use in wide-temperature environments.

What package style and mounting method does it use for PCB assembly?

It is supplied in a PowerPAK 8‑pin package designed for direct PCB mounting to improve thermal performance.

How does the device support automotive applications?

It meets AEC‑Q101 requirements, making it suitable for vehicle electronic systems that need automotive‑grade components.

What gate drive considerations should be observed for reliable switching?

The gate can accept up to 20V relative to source and the typical gate charge is 26nC, which informs driver sizing and switching-loss calculations.