ROHM SCT4018KWA N-Channel Single MOSFETs, 75 A, 1.2 kV Enhancement, 8-Pin TO-263-7LA
- RS-stocknr.:
- 687-342P
- Fabrikantnummer:
- SCT4018KWATL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 227,95
(excl. BTW)
€ 275,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 1.000 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 10 + | € 22,795 |
*prijsindicatie
- RS-stocknr.:
- 687-342P
- Fabrikantnummer:
- SCT4018KWATL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263-7LA | |
| Series | SCT4018KWA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 267W | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.2mm | |
| Height | 4.5mm | |
| Length | 15.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263-7LA | ||
Series SCT4018KWA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 267W | ||
Maximum Gate Source Voltage Vgs 21V | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.2mm | ||
Height 4.5mm | ||
Length 15.4mm | ||
Automotive Standard No | ||
- Land van herkomst:
- TH
The ROHM N channel SiC power MOSFET, designed for efficient power management in a variety of applications. With a maximum drain-source voltage of 1200V and a low on-resistance of 18mΩ, this MOSFET optimises performance in high-efficiency systems like solar inverters and induction heating. It provides robust thermal management with a junction temperature range of up to 175°C, ensuring reliable operation even in demanding environments. The device features a fast switching speed, making it ideal for applications requiring high-frequency switching, thereby enhancing overall system efficiency and performance.
Low on resistance ensures minimal energy loss during operation
Supports fast switching speeds for improved efficiency
Designed for easy parallel operation, facilitating scalability
Robust thermal characteristics enable operation in extreme conditions
Pb free lead plating complies with RoHS standards for environmental safety
Wide creepage distance of 4.7 mm enhances reliability in high-voltage applications
Ideal for various applications including solar inverters and DC/DC converters