ROHM RY7P250BM Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI
- RS-stocknr.:
- 687-343P
- Fabrikantnummer:
- RY7P250BMTBC
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 20 eenheden (geleverd op een doorlopende strip)*
€ 100,30
(excl. BTW)
€ 121,36
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 200 stuk(s) vanaf 29 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 20 - 98 | € 5,015 |
| 100 - 198 | € 4,505 |
| 200 + | € 3,54 |
*prijsindicatie
- RS-stocknr.:
- 687-343P
- Fabrikantnummer:
- RY7P250BMTBC
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN8080T8LSHAAI | |
| Series | RY7P250BM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.86mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 340W | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 1.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN8080T8LSHAAI | ||
Series RY7P250BM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.86mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 340W | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 1.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.
Low on resistance for enhanced efficiency
Wide-SOA characteristics for superior reliability
Designed to handle continuous drain currents up to 250A
High pulsed drain current capability at ±900A
Excellent thermal management with thermal resistance of 0.44°C/W
Suitable for a wide operating temperature range of -55 to +175°C
Complies with RoHS and halogen-free standards.
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