ROHM SCT4036KWA N-Channel Single MOSFETs, 40 A, 1.2 kV Enhancement, 8-Pin TO-263-7LA
- RS-stocknr.:
- 687-344P
- Fabrikantnummer:
- SCT4036KWATL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 115,85
(excl. BTW)
€ 140,18
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 01 juni 2027
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Aantal stuks | Per stuk |
|---|---|
| 10 + | € 11,585 |
*prijsindicatie
- RS-stocknr.:
- 687-344P
- Fabrikantnummer:
- SCT4036KWATL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263-7LA | |
| Series | SCT4036KWA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.2mm | |
| Height | 4.5mm | |
| Length | 15.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263-7LA | ||
Series SCT4036KWA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 21V | ||
Maximum Operating Temperature 150°C | ||
Width 10.2mm | ||
Height 4.5mm | ||
Length 15.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- TH
The ROHM N channel SiC power MOSFET, engineered for high-performance applications requiring efficient switching capabilities. With a maximum drain-source voltage of 1200V and a typical on-resistance of 36mΩ, this device excels in demanding environments like solar inverters and DC/DC converters. Its robust design features a high continuous drain current rating of 40A at 25°C, supporting versatility in various applications. The device is optimised for fast switching, providing enhanced efficiency. Additionally, its Pb-free lead plating complies with RoHS standards, ensuring an eco-friendly approach without compromising on performance.
Delivers low on resistance for minimal power loss during operation
Supports a wide range of continuous and pulsed drain currents for enhanced flexibility in design
Optimised for fast switching speeds, contributing to improved overall efficiency
Features robust thermal resistance capabilities, allowing for reliable operation at elevated temperatures
Incorporates a simple gate drive design, facilitating easier integration into existing systems
Compliant with environmental regulations through Pb free lead plating, aligning with contemporary sustainability practices
Offers a wide creepage distance of 4.7mm, enhancing reliability in high-voltage applications