ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, 80 A, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL
- RS-stocknr.:
- 687-359P
- Fabrikantnummer:
- AG501EGD3HRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 20 eenheden (geleverd op een doorlopende strip)*
€ 30,60
(excl. BTW)
€ 37,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 20 - 48 | € 1,53 |
| 50 - 198 | € 1,375 |
| 200 - 998 | € 1,11 |
| 1000 + | € 1,08 |
*prijsindicatie
- RS-stocknr.:
- 687-359P
- Fabrikantnummer:
- AG501EGD3HRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | AG501EGD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.5mm | |
| Width | 6.8mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series AG501EGD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Gate Source Voltage Vgs 5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.5mm | ||
Width 6.8mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.
Offers low on resistance for reduced power loss and enhanced efficiency
AEC Q101 qualified, ensuring reliability for automotive and critical applications
Avalanche tested to guarantee performance under dynamic conditions
Supports a maximum power dissipation of 142W, compatible with high-performance designs
Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments
Pb free plating and RoHS compliant, meeting modern environmental standards
Optimised packaging specifications, including embedding options for automated assembly
Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events