ROHM R8011KNZ4 Type N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8011KNZ4C13

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  • Verzending vanaf 23 juni 2026
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2 - 18€ 4,21€ 8,42
20 - 98€ 3,71€ 7,42
100 - 198€ 3,33€ 6,66
200 +€ 2,62€ 5,24

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Verpakkingsopties
RS-stocknr.:
687-457
Fabrikantnummer:
R8011KNZ4C13
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

R8011KNZ4

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.45Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

139W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Height

5.22mm

Standards/Approvals

RoHS

Length

40mm

Width

16.24 mm

Automotive Standard

No

The ROHM Power MOSFET designed to deliver exceptional efficiency and reliability in various applications. With a voltage rating of 800V and a maximum continuous drain current of 11A, this component excels in demanding environments. Engineered for fast switching, it features a low on-resistance of just 0.45Ω, enabling reduced power loss and efficient thermal management. Its robust construction ensures compliance with environmental standards, including RoHS, making it a practical choice for modern electronic designs that prioritise sustainability along with performance.

Low on resistance ensures efficient power delivery

Fast switching capability optimises performance in high-speed applications

Robust construction supports parallel use, enhancing design flexibility

Compliant with RoHS standards, contributing to environmentally friendly designs

Wide operating temperature range from -55 to +150°C ensures reliability in extreme conditions

Thermal resistance ratings provide excellent heat management in compact designs

Effective gate charge characteristics allow for easier integration into existing circuits

Versatile applications in industrial, automotive, and consumer electronics sectors

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