ROHM R8019KNZ4 Type N-Channel Single MOSFETs, 800 V Enhancement, 3-Pin TO-247 R8019KNZ4C13
- RS-stocknr.:
- 687-367
- Fabrikantnummer:
- R8019KNZ4C13
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 zak van 2 eenheden)*
€ 11,45
(excl. BTW)
€ 13,854
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Zak* |
|---|---|---|
| 2 - 18 | € 5,725 | € 11,45 |
| 20 - 98 | € 5,04 | € 10,08 |
| 100 - 198 | € 4,525 | € 9,05 |
| 200 + | € 3,56 | € 7,12 |
*prijsindicatie
- RS-stocknr.:
- 687-367
- Fabrikantnummer:
- R8019KNZ4C13
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247 | |
| Series | R8019KNZ4 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.265Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 40mm | |
| Width | 16.24 mm | |
| Height | 5.22mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247 | ||
Series R8019KNZ4 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.265Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 40mm | ||
Width 16.24 mm | ||
Height 5.22mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel MOSFET designed for high-efficiency performance in electronic applications. Featuring a maximum Drain-Source voltage of 800V and a continuous drain current capability of 19A, this device effectively manages significant power loads while maintaining low on-resistance. Engineered with advanced switching capabilities, it provides rapid response times essential for efficient circuit operation. The encapsulation in a TO-247G package ensures straightforward mounting and excellent thermal performance, making it ideal for power management in everything from industrial systems to consumer electronics.
Low on resistance of just 0.265Ω, enhancing energy efficiency
Rated for continuous drain current of ±19A, allowing substantial power handling
Fast switching performance optimises the operation of dynamic circuits
Pb free lead plating ensures compliance with environmental standards
Robust avalanche ratings support reliable operation in transient conditions
Ideal for parallel usage, simplifying multiple device configurations.
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