ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, 40 A, -40 V Enhancement, 8-Pin DFN3333T8LSAB
- RS-stocknr.:
- 687-463P
- Fabrikantnummer:
- RH7G04CBJFRATCB
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 20 eenheden (geleverd op een doorlopende strip)*
€ 14,50
(excl. BTW)
€ 17,54
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 20 - 48 | € 0,725 |
| 50 - 198 | € 0,65 |
| 200 - 998 | € 0,52 |
| 1000 + | € 0,51 |
*prijsindicatie
- RS-stocknr.:
- 687-463P
- Fabrikantnummer:
- RH7G04CBJFRATCB
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | DFN3333T8LSAB | |
| Series | RH7G04CBJFRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62W | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Width | 3.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type DFN3333T8LSAB | ||
Series RH7G04CBJFRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62W | ||
Maximum Gate Source Voltage Vgs 5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 1.1mm | ||
Width 3.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- JP
The ROHM Power MOSFET designed to deliver exceptional performance in demanding applications. This component is specifically engineered for high-efficiency switching, making it ideal for automotive, lighting, and other high-reliability systems. With its robust thermal characteristics, including a maximum power dissipation of 62W and an impressive ±40A continuous drain current, the RH7G04CBJFRA ensures reliable operation under various conditions. Furthermore, this MOSFET integrates advanced features such as avalanche testing and AEC-Q101 qualification, guaranteeing safety and durability in critical environments.
Features a low on-state resistance of 17.7mΩ for improved efficiency
Delivers a maximum pulsed drain current of ±80A, enabling high-performance applications
Utilises wettable flanks for enhanced solder joint reliability
Offers robust thermal resistance to maintain performance under heavy loads
Operates effectively across a wide temperature range of -55 to +175°C
Includes a 100% avalanche test specification for increased safety
Employed in a variety of applications including ADAS and automotive lighting
Comes with detailed packaging specifications for user-friendly integration