DiodesZetex DMP10H4D2S P-Channel MOSFET, -0.27 A, -100 V Enhancement, 3-Pin SOT-23 DMP10H4D2S-7
- RS-stocknr.:
- 719-513
- Fabrikantnummer:
- DMP10H4D2S-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (5 eenheden, in een pakket van 5)*
€ 0,61
(excl. BTW)
€ 0,74
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 07 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 120 | € 0,122 | € 0,61 |
| 125 - 495 | € 0,108 | € 0,54 |
| 500 - 2495 | € 0,098 | € 0,49 |
| 2500 + | € 0,084 | € 0,42 |
*prijsindicatie
- RS-stocknr.:
- 719-513
- Fabrikantnummer:
- DMP10H4D2S-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -0.27A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Series | DMP10H4D2S | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 0.44W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Width | 2.55mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -0.27A | ||
Maximum Drain Source Voltage Vds -100V | ||
Series DMP10H4D2S | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 0.44W | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Width 2.55mm | ||
Height 1.15mm | ||
Automotive Standard AEC-Q | ||
- Land van herkomst:
- CN
The DiodesZetex P Channel enhancement mode MOSFET designed for high-efficiency power-management applications. It excels in minimising on-state resistance while providing superior switching performance, making it suitable for a range of applications including automotive systems and battery-powered devices. With its small surface-mount package and robust characteristics, it supports efficient operation in various electronic configurations, ensuring reliable functionality even in challenging environments.
Low gate threshold voltage enables efficient control for power management
Low input capacitance allows for Faster switching speeds, optimising performance
ESD protected up to 2kV enhances device reliability under stress conditions
Lead-free and RoHS compliant, ensuring environmental safety and compliance
Qualified to JEDEC standards, demonstrating high reliability for automotive applications
Moisture sensitivity level 1, offering robustness during handling and assembly
Low on resistance values at specified gate-source voltages contribute to energy efficiency
Ideal for automotive-compliant applications, reinforcing its versatile functionality
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