DiodesZetex DMN62D0U N channel-Channel MOSFET, 430 mA, 60 V Enhancement, 3-Pin SOT-23 DMN62D0U-7
- RS-stocknr.:
- 719-571
- Fabrikantnummer:
- DMN62D0U-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 0,26
(excl. BTW)
€ 0,315
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 september 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 120 | € 0,052 | € 0,26 |
| 125 - 495 | € 0,048 | € 0,24 |
| 500 - 2495 | € 0,044 | € 0,22 |
| 2500 + | € 0,036 | € 0,18 |
*prijsindicatie
- RS-stocknr.:
- 719-571
- Fabrikantnummer:
- DMN62D0U-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 430mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN62D0U | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 590mW | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.5mm | |
| Height | 1.1mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 430mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN62D0U | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 590mW | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 2.5mm | ||
Height 1.1mm | ||
Length 3mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management in various applications. This device excels in minimising on-state resistance while ensuring Rapid switching performance, making it Ideal for motor controls and power-management functions. With a robust construction tailored for automotive applications and compliance with stringent standards such as AEC-Q100, it meets industry demands for reliability and safety. Its versatile application range and high thermal stability ensure dependable operation in demanding environments.
Low on resistance ensures efficient power conversion
Fast switching speeds improve overall circuit performance
Robust design supports automotive applications, compliant with AEC-Q100
Offers low input capacitance for reduced signal delay
Lead-free and RoHS compliant, contributing to environmental sustainability
ESD protection up to 1kV enhances reliability
Optimised thermal characteristics support high power dissipation
Dimensions and weight are tailored for efficient space utilisation
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