Vishay TrenchFET N channel-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin 1206-8 ChipFET SI5908BDC-T1-GE3
- RS-stocknr.:
- 735-215
- Fabrikantnummer:
- SI5908BDC-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 0,88
(excl. BTW)
€ 1,06
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 24 februari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 24 | € 0,88 |
| 25 - 99 | € 0,58 |
| 100 - 499 | € 0,30 |
| 500 + | € 0,29 |
*prijsindicatie
- RS-stocknr.:
- 735-215
- Fabrikantnummer:
- SI5908BDC-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | 1206-8 ChipFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.05Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.975 mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type 1206-8 ChipFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.05Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Operating Temperature 150°C | ||
Width 1.975 mm | ||
Standards/Approvals RoHS Compliant | ||
Length 3.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
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