Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3

RS-stocknr.:: 256-7365
Fabrikantnummer:: SI5442DU-T1-GE3
Fabrikant:: Vishay

Vishay SI5442DU Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK ChipFET SI5442DU-T1-GE3

Subtotaal (1 verpakking van 25 eenheden)*

€ 9,45

(excl. BTW)

€ 11,425

(incl. BTW)

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Aantal stuks	Per stuk	Per verpakking*
25 +	€ 0,378	€ 9,45

*prijsindicatie

RS-stocknr.:: 256-7365
Fabrikantnummer:: SI5442DU-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	20V
	Package Type	PowerPAK ChipFET
	Series	SI5442DU
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0135Ω
	Maximum Gate Source Voltage Vgs	8V
	Maximum Power Dissipation Pd	31W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	16.6nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	0.85mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 20V
	Package Type PowerPAK ChipFET
	Series SI5442DU
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0135Ω
	Maximum Gate Source Voltage Vgs 8V
	Maximum Power Dissipation Pd 31W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 16.6nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 0.85mm
	Automotive Standard No

Datasheet - SI5442DU-T1-GE3

Vishay SI5442DU Series MOSFET, 20V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SI5442DU-T1-GE3

This MOSFET is a Compact N‑channel switching device intended for surface‑mount power applications. It is designed to handle significant continuous current while operating across a wide temperature range, making it suitable for industrial control and power‑conversion contexts where low conduction losses and Rapid switching are required.

Features and Benefits:

• 25A continuous current capability enables high‑current switching
• 0.0135 Ω Rds(on) minimises conduction losses in power paths
• 20V drain‑source rating supports low‑voltage power rails
• 16.6 nC typical gate charge allows efficient switching control
• 31W power dissipation supports sustained thermal load handling
• Vgs maximum 8V protects the gate from overvoltage during drive

Applications

• Suitable for motor‑drive power stages in automation systems
• Ideal for synchronous buck converters in DC-DC supplies
• Used for high‑current load switching in industrial controls
• Can be used for power management in battery‑powered equipment

What thermal operating limits should be considered during design?

The device is rated for operation from -55 °C up to +150 °C, so thermal management must ensure junction temperatures remain within this range under Peak power conditions.

How many pins and what mounting style does it require on a board?

It is supplied in an 8‑pin surface‑mount PowerPAK ChipFET package, so pad layout and soldering profiles should match an 8‑pin SMD footprint.

What gate‑drive constraints affect drive circuitry selection?

The gate must not be driven beyond a maximum of 8 V, so gate drivers and level shifting must limit Vgs within that threshold to avoid damage.

How should designers evaluate switching performance for high‑frequency use?

Use the typical gate‑charge Value of 16.6 nC at the specified gate voltage to calculate driver energy and switching losses when determining efficiency at the target switching frequencies.