Vishay TrenchFET N channel-Channel MOSFET, 101 A, 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3
- RS-stocknr.:
- 735-218
- Fabrikantnummer:
- SIR5408DP-T1-UE3
- Fabrikant:
- Vishay
Afbeelding representeert productcategorie
Subtotaal (1 eenheid)*
€ 1,14
(excl. BTW)
€ 1,38
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 1,14 |
*prijsindicatie
- RS-stocknr.:
- 735-218
- Fabrikantnummer:
- SIR5408DP-T1-UE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.004Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 59.5W | |
| Typical Gate Charge Qg @ Vgs | 32.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 5.26mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.004Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 59.5W | ||
Typical Gate Charge Qg @ Vgs 32.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals RoHS Compliant | ||
Width 5.26mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay N channel MOSFET is built for high-efficiency power conversion and control in demanding electronic systems. it ensures robust performance with comprehensive testing, while maintaining compliance with environmental standards. its versatility makes it Ideal for applications requiring reliable rectification, Compact dc/dc solutions, and precise motor drive control.
Provides 100% Rg and UIS testing for proven reliability
Ensures RoHS compliance for environmental safety
Delivers halogen-free construction for eco-friendly design
Supports synchronous rectification for efficient power conversion
Enables motor drive control with dependable switching performance
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