Infineon CoolGaN N channel-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1
- RS-stocknr.:
- 762-901
- Fabrikantnummer:
- IGLT65R110B2AUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,47
(excl. BTW)
€ 7,83
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,47 |
| 10 - 49 | € 5,24 |
| 50 - 99 | € 4,01 |
| 100 + | € 3,22 |
*prijsindicatie
- RS-stocknr.:
- 762-901
- Fabrikantnummer:
- IGLT65R110B2AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N channel | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolGaN | |
| Package Type | PG-HDSOP-16 | |
| Mount Type | Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.61nC | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 55W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.3mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N channel | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolGaN | ||
Package Type PG-HDSOP-16 | ||
Mount Type Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.61nC | ||
Maximum Gate Source Voltage Vgs -10V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 55W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 10.1mm | ||
Standards/Approvals RoHS Compliant | ||
Length 10.3mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.
Optimized for soft switching operation
Dual‑gate for independent bi‑directional functionality
Superior performance
Versatile for diverse industrial applications
Gerelateerde Links
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R080D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R055D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R110D2XUMA1
- Infineon CoolGaN G5 Type N-Channel Single MOSFETs 650 V Enhancement, 8-Pin PG-TSON-8 IGL65R140D2XUMA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R075M2HXTMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R180CM8XTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R050M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R040M2HXTMA1