Infineon CoolSiC N channel-Channel Power MOSFET, 74 A, 650 V Enhancement, 3-Pin TO-247 IMW65R075M2HXKSA1
- RS-stocknr.:
- 762-919
- Fabrikantnummer:
- IMW65R075M2HXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 5,11
(excl. BTW)
€ 6,18
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 5,11 |
| 10 - 49 | € 4,14 |
| 50 - 99 | € 3,17 |
| 100 + | € 2,53 |
*prijsindicatie
- RS-stocknr.:
- 762-919
- Fabrikantnummer:
- IMW65R075M2HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 124W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Standards/Approvals | RoHS | |
| Length | 21.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 124W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Standards/Approvals RoHS | ||
Length 21.5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Ultra‑low switching losses
Enhances system robustness and reliability
Facilitates great ease of use and integration
Reduces the size, weight and bill of materials of the systems
Gerelateerde Links
- Infineon CoolSiC N channel-Channel Power MOSFET 1400 V Enhancement, 4-Pin TO-247-4 IMZC140R024M2HXKSA1
- Infineon CoolSiC N channel-Channel Power MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R075M2HXTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247