Infineon CoolSiC N-Channel Power MOSFET, 207 A, 1.4 kV Enhancement, 4-Pin PG-TO247-4 IMYR140R008M2HXLSA1

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€ 39,13

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€ 47,35

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RS-stocknr.:
762-946
Fabrikantnummer:
IMYR140R008M2HXLSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

207A

Maximum Drain Source Voltage Vds

1.4kV

Package Type

PG-TO247-4

Series

CoolSiC

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

203nC

Maximum Power Dissipation Pd

710W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25V

Maximum Operating Temperature

175°C

Width

16mm

Standards/Approvals

RoHS

Length

23.8mm

Height

4.9mm

Automotive Standard

No

Land van herkomst:
MY
The Infineon CoolSiC 1400 V G2 SiC MOSFET features a 1400 V rating and a current capability of 147 A at 100°C, with a low on-resistance of 8.5 mΩ. It supports high thermal performance and can withstand short circuits for 2 μs. The device is designed with robust parasitic turn-on protection and a high creepage distance.

Very low switching losses

Robust body diode for hard commutation

Wide power pins for high current capability

Resistive weldable pins for direct busbar connections

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