onsemi FDV3 Type N-Channel Single MOSFETs, 0.22 A, 25 V N, 3-Pin SOT-23-3 FDV301N
- RS-stocknr.:
- 765-307
- Fabrikantnummer:
- FDV301N
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 5,50
(excl. BTW)
€ 6,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 100 - 900 | € 0,055 | € 5,50 |
| 1000 - 4900 | € 0,048 | € 4,80 |
| 5000 - 9900 | € 0,043 | € 4,30 |
| 10000 + | € 0,037 | € 3,70 |
*prijsindicatie
- RS-stocknr.:
- 765-307
- Fabrikantnummer:
- FDV301N
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.22A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | FDV3 | |
| Package Type | SOT-23-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.49nC | |
| Maximum Power Dissipation Pd | 0.35W | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.3mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.22A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series FDV3 | ||
Package Type SOT-23-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.49nC | ||
Maximum Power Dissipation Pd 0.35W | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.3mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
The onsemi N-Channel logic level enhancement mode field effect transistor designed for low voltage applications. This Advanced device leverages proprietary G S DMOS technology to achieve minimal on-state resistance, making it an Ideal choice for replacing several digital transistors. Its eliminates the need for bias resistors, streamlining circuit design by offering a single FET solution for various digital applications, ultimately enhancing efficiency and reliability in electronic devices.
Supports a continuous drain current of 0.22 A with a Peak of 0.5 A
Features a low R DS(on) of just 4 Ohms at 4.5 V, ensuring efficient power handling
Designed for direct operation in 3 V circuits, allowing seamless integration in low-voltage systems
Capable of replacing multiple NPN digital transistors, simplifying component count in designs
Complies with Pb-Free and Halide-Free standards, supporting environmentally conscious designs
Thermal resistance of 357 °C/W ensures reliable performance under varying temperature conditions
Maximum drain-source voltage rating of 25 V offers robust functionality across diverse applications
Gate threshold voltage range ensures consistent performance across the operating spectrum
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