onsemi FDN N channel-Channel MOSFET, 1.7 A, 60 V, 3-Pin SOT-23 FDN5630
- RS-stocknr.:
- 838-618P
- Fabrikantnummer:
- FDN5630
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 250 eenheden (geleverd op een rol)*
€ 36,50
(excl. BTW)
€ 44,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 12 april 2027
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Aantal stuks | Per stuk |
|---|---|
| 250 - 1225 | € 0,146 |
| 1250 - 2475 | € 0,112 |
| 2500 + | € 0,088 |
*prijsindicatie
- RS-stocknr.:
- 838-618P
- Fabrikantnummer:
- FDN5630
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | FDN | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4mm | |
| Length | 2.9mm | |
| Height | 1.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series FDN | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.4mm | ||
Length 2.9mm | ||
Height 1.4mm | ||
Automotive Standard No | ||
The onsemi N-Channel MOSFET primarily is designed to enhance the efficiency of dc-dc converters using switching PWM controllers.
Optimised for high-frequency applications, ensuring better performance
Features low R DS(on) values, enhancing efficiency within Compact designs
Incorporates fast switching capabilities for improved operational speeds
Available in a Pb-Free and Halogen Free package for environmental compliance