Vishay Half Bridge VS-H N-Channel MOSFET Modules, 195 A, 650 V Enhancement, 12-Pin FlatPAK 5 x 6 VS-HOT200C080
- RS-stocknr.:
- 869-230
- Fabrikantnummer:
- VS-HOT200C080
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 36,07
(excl. BTW)
€ 43,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 36,07 |
| 5 + | € 35,35 |
*prijsindicatie
- RS-stocknr.:
- 869-230
- Fabrikantnummer:
- VS-HOT200C080
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET Modules | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | VS-H | |
| Package Type | FlatPAK 5 x 6 | |
| Mount Type | Screw | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.91mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 194W | |
| Forward Voltage Vf | 1V | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Width | 22.8mm | |
| Height | 12.7mm | |
| Length | 30mm | |
| Standards/Approvals | UL 94 V-0 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET Modules | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series VS-H | ||
Package Type FlatPAK 5 x 6 | ||
Mount Type Screw | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.91mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 194W | ||
Forward Voltage Vf 1V | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Width 22.8mm | ||
Height 12.7mm | ||
Length 30mm | ||
Standards/Approvals UL 94 V-0 | ||
Automotive Standard No | ||
- Land van herkomst:
- KR
The Vishay power module designed for half-bridge applications with Advanced features for current and temperature sensing. This innovative solution provides efficient power management and reliability.
Supports current and temperature sensing for enhanced reliability
Utilises an electrically isolated DBC substrate to minimise EMI
Passes rigorous AQG324 qualification for automotive applications
Operates at a maximum junction temperature of 175 °C, ensuring durability
Delivers low on-resistance values of 0.45 mΩ for improved efficiency
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